| ‘Ill!7 WWW'ViShay'C°m Vishay Semiconductors 1000 Reverse Current - I R (uA) 100 Reverse Voitage-VR(V) Fig. 1 - Typical Values of Reverse Current vs.Reverse Voltage 10 Instantaneous FonNard Current - I F (A) 10.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8Fonivard Voltage Drop-VFM (V) Reverse Voltage-VR(V) Fig. 1 - Maximum Forward Voltage Drop Characteristics _ _ _ _Fig. 2 - Typical Junction Capacitance vs.Reverse Voltage 0.1 Singie Puise(Thermal Resistance) I. Duty factor D = t1/t2 .Peak TI = Pdm x ZmJC + Tc Thermal Impedance 2 WC (°CNv) 0.010.00001 0.0001 0.001 0.01 0.1 1tI.ReCtanguiar Pulse Duration (Seconds) Fig. 2 - Maximum Thermal Impedance ZWC Characteristics Revision: 16-Jun-11 3 Document Number: 93003 For technical questions within your region: DiodesAmericas@vishay.Com, DiodesAsia@vishay.com, DiQdesEuroge@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vIshay.com/doc?91000 |